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    Home/    Category/    FET, MOSFET/    ZXMD65P02N8TC

    MOSFET 2P-CH 20V 4A 8SOIC ZXMD65P02N8TC

    ZXMD65P02N8TC image
    The pictures are for reference only
    Brand:
    Diodes
    Model:
    ZXMD65P02N8TC
    Description:
    MOSFET 2P-CH 20V 4A 8SOIC
    Stock:
    18181
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    4A
  • Drain source voltage (Vdss)
    20V
  • FET Type
    2 P Channel(two)
  • FET function
    standard
  • Gate charge (Qg) at different Vgs (maximum)
    20nC @ 4.5V
  • Input capacitance at different Vds (Ciss) (maximum)
    960pF @ 15V
  • On resistance (maximum) for different Ids and Vgs
    50 mΩ @ 2.9A,4.5V
  • Power - maximum
    1.75W
  • Vgs (th) (maximum) for different Ids
    700mV @ 250µA(min)
  • packing
    TR
  • series
    -
  • working temperature
    -
  • Encapsulation/Housing
    8-SOIC(0.154,3.90mm wide)
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    ZXMD65P02N8TC（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18181,Price reference "real-time change" China/Hongkong。 ZXMD65P02N8TC package/specs, Download ZXMD65P02N8TC、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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